发明名称 |
Phase changeable memory cells and methods of forming the same |
摘要 |
A phase changeable memory cell is provided. The phase changeable memory cell includes a lower interlayer dielectric layer formed on a semiconductor substrate and a lower conductive plug passing through the lower interlayer dielectric layer. The lower conductive plug is in contact with a phase change material pattern disposed on the lower interlayer dielectric layer. The phase change material pattern and the lower interlayer dielectric layer are covered with an upper interlayer dielectric layer. The phase change material pattern is in direct contact with a conductive layer pattern, which is disposed in a plate line contact hole passing through the upper interlayer dielectric layer. Methods of fabricating the phase changeable memory cell is also provided.
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申请公布号 |
US7642622(B2) |
申请公布日期 |
2010.01.05 |
申请号 |
US20050288672 |
申请日期 |
2005.11.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YI JI-HYE;CHO BYEONG-OK;CHO SUNG-LAE |
分类号 |
H01L29/22 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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