发明名称 |
Radiation-emitting semiconductor component based on gallium nitride, and method for fabricating the semiconductor component |
摘要 |
A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of GaN-based layers have been formed. The active region of these layers is arranged between at least one n-conducting layer and a p-conducting layer. The p-conducting layer is grown in tensile-stressed form. The p-doping that is used is preferably Mg.
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申请公布号 |
US7642565(B2) |
申请公布日期 |
2010.01.05 |
申请号 |
US20030439084 |
申请日期 |
2003.05.15 |
申请人 |
OSRAM GMBH |
发明人 |
BADER STEFAN;HAHN BERTHOLD;HAERLE VOLKER;LUGAUER HANS-JUERGEN |
分类号 |
H01L33/00;H01L33/32;H01S5/30;H01S5/343 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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