发明名称 Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods
摘要 A thin film made of a wurtzite structure compound is manufactured by a reactive sputtering using a metal material as a target, and a nitrogen gas or oxygen gas as a reactive gas. By optimizing film-forming conditions when manufacturing the film, it is possible to obtain a wurtzite thin film whose polarization directions of crystal grains are aligned in a uniform direction. There is provided a laminate including a first wurtzite crystalline layer made of a wurtzite crystalline structure compound is formed in advance between a substrate and a functional material layer that is a ground. Thus it is possible to improve the crystallinity and crystalline orientation of a second wurtzite crystalline layer on the functional material layer.
申请公布号 US7642693(B2) 申请公布日期 2010.01.05
申请号 US20040556663 申请日期 2004.05.14
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY 发明人 AKIYAMA MORITO;UENO NAOHIRO;TATEYAMA HIROSHI;KAMOHARA TOSHIHIRO
分类号 H01L41/083;C23C14/06;C30B23/00;H01L41/22;H01L41/257;H01L41/316 主分类号 H01L41/083
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