发明名称 |
Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods |
摘要 |
A thin film made of a wurtzite structure compound is manufactured by a reactive sputtering using a metal material as a target, and a nitrogen gas or oxygen gas as a reactive gas. By optimizing film-forming conditions when manufacturing the film, it is possible to obtain a wurtzite thin film whose polarization directions of crystal grains are aligned in a uniform direction. There is provided a laminate including a first wurtzite crystalline layer made of a wurtzite crystalline structure compound is formed in advance between a substrate and a functional material layer that is a ground. Thus it is possible to improve the crystallinity and crystalline orientation of a second wurtzite crystalline layer on the functional material layer.
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申请公布号 |
US7642693(B2) |
申请公布日期 |
2010.01.05 |
申请号 |
US20040556663 |
申请日期 |
2004.05.14 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
AKIYAMA MORITO;UENO NAOHIRO;TATEYAMA HIROSHI;KAMOHARA TOSHIHIRO |
分类号 |
H01L41/083;C23C14/06;C30B23/00;H01L41/22;H01L41/257;H01L41/316 |
主分类号 |
H01L41/083 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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