发明名称 |
Semiconductor laser and method of fabricating the same |
摘要 |
<p>An intrinsic GaAs waveguide layer (9) is formed on a p-type AlGaAs cladding layer (2), a quantum dot active layer (3) is formed further thereon. An n-type AlGaAs cladding layer (4) is formed on the center portion of the quantum dot active layer. Thus-configured semiconductor laser is allowed to successfully suppress the area of the p-n junction plane to a small level, and to obtain a high level of reliability, because there is no need of processing the center portion of the quantum dot active layer, contributive to laser oscillation.
</p> |
申请公布号 |
EP1717919(A3) |
申请公布日期 |
2010.01.06 |
申请号 |
EP20060250417 |
申请日期 |
2006.01.25 |
申请人 |
FUJITSU LIMITED;THE UNIVERSITY OF TOKYO |
发明人 |
HATORI, NOBUAKI;YAMAMOTO, TSUYOSHI;OTSUBO, KOJI;ARAKAWA, YASUHIKO |
分类号 |
H01S5/34;H01S5/062 |
主分类号 |
H01S5/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|