| 摘要 |
A method of manufacturing a semiconductor device has forming a first insulating film on a low dielectric constant film; etching the first insulating film and the low dielectric constant film to form a trench in a region in which the wiring layer is to be formed; forming a first barrier metal film in the trench and on the first insulating film; forming a film of a conductive material on the first barrier metal film, thereby burying the conductive material in the trench to form a conductor layer; polishing and planarizing the conductor layer, the first barrier metal film and the first insulating film by CMP using a slurry, wherein the first insulating film is not completely removed; and etching the remained first insulating film after the planarization by the CMP manner.
|
