| 摘要 |
<p>PURPOSE: A TIM for a semiconductor chip and a forming method thereof are provided to increase mechanical intensity of the TIM by forming an array of a carbon nano tube on a substrate. CONSTITUTION: An array of a carbon nano tube(21) is vertically grown on a base material(10). The paste is infiltrated to the array of the carbon nano tube. The paste includes a nano metal powder, a binder, a dispersing agent(23), and a solvent. A pre-sintered layer is formed on the base material. A semiconductor chip(30) is arranged on the pre-sintered layer. The pre-sintered layer is thermally treated with the sintering temperature of the nano metal powder to form a TIM(20).</p> |
