NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to reduce a process failure by forming a high voltage gate insulation film and a low voltage insulation film with different thickness. CONSTITUTION: A substrate(101) includes a memory cell part, a low voltage part, and a high voltage part. A tunnel insulation film(105a) is formed in the memory cell part. The tunnel insulation film includes a deposition film. A low voltage gate insulation film(105b) is formed in the low voltage part. A low voltage gate insulation film is made of the same material as the tunnel insulation film. A high voltage gate insulation film(105c) is formed in the high voltage part. The high voltage gate insulation film includes a first oxide film and a low voltage insulation film. The high voltage gate insulation film is thicker than the low voltage gate insulation film.