发明名称 CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE
摘要 A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass % of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass % of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium hydrogen sulfate, the chemical mechanical polishing aqueous dispersion having a mass ratio (A)/(B) of the component (A) to the component (B) of 1 to 3 and a pH of 4 to 5 and being able to simultaneously polish at least two films that form a polishing target surface and are selected from a polysilicon film, a silicon nitride film, and a silicon oxide film.
申请公布号 US2009325383(A1) 申请公布日期 2009.12.31
申请号 US20080374074 申请日期 2008.02.20
申请人 JSR CORPORATION 发明人 ANDOU MICHIAKI;KONNO TOMOHISA
分类号 H01L21/306;B24B37/00;B82Y10/00;C09K13/04;H01L21/304 主分类号 H01L21/306
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