| 摘要 |
A method and an apparatus for manufacturing a high intensity electron emitting device using a boron lanthanum compound thin film are provided. An electron emitting base member region is opened in a second substrate disposed with an electron emitting base member, and is applied with a mask screening another region, thereby sputter-accumulating the sputtered particles of a low work function substance target. The second substrate sputter-accumulated and a first substrate disposed with phosphor are sealed by a sealing agent to fabricate a vacuum chamber. During the fabrication step, the first and second substrates are consistently maintained in a vacuum atmosphere or a reduced pressure atmosphere.
|
