发明名称 |
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
There are provided a substrate processing method and apparatus adapted to prevent deterioration of film thickness uniformity while maintaining the film forming rate. The substrate processing method comprises: (a) accommodating a plurality of substrates in a process chamber by carrying and stacking the substrates in the process chamber, (b) forming first amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying first gas, and (c) forming second amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying second gas different from the first gas. The first gas is higher order gas than the second gas.
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申请公布号 |
US2009325366(A1) |
申请公布日期 |
2009.12.31 |
申请号 |
US20090410963 |
申请日期 |
2009.03.25 |
申请人 |
HITACHI-KOKUSAI ELECTRIC INC. |
发明人 |
MORIYA ATSUSHI;INOKUCHI YASUHIRO;KUNII YASUO |
分类号 |
H01L21/365;C23C16/42 |
主分类号 |
H01L21/365 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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