发明名称 |
METHOD OF MANUFACTURING SILICON NANOWIRES USING SILICON NANODOT THIN FILM |
摘要 |
Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.
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申请公布号 |
US2009325365(A1) |
申请公布日期 |
2009.12.31 |
申请号 |
US20060304737 |
申请日期 |
2006.12.08 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
PARK RAE-MAN;KIM SANG-HYEOB;PARK JONGHYURK;MAENG SUNGLYUL |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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