| 摘要 |
A method of manufacturing a semiconductor device according to the present invention includes the steps of introducing first impurities of a first conductivity type into a main surface of a semiconductor substrate 1 to form a first impurity region, introducing second impurities of a second conductivity type to form a second impurity region, forming a first nickel silicide film on the first impurity region and forming a second nickel silicide film on the second impurity region, removing an oxide film formed on each of the first and second nickel silicide films by using a mixed gas having an NH3 gas and a gas containing a hydrogen element mixed therein, and forming a first conducting film on the first nickel silicide film and forming a second conducting film on the second nickel silicide film, with the oxide film removed.
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