| 摘要 |
A semiconductor memory device includes, in a memory region, a plurality of bit line diffusion layers, a plurality of word lines, and a plurality of memory elements composed of a bit line diffusion layer pair, a gate insulating film, and a gate electrode. The plurality of bit line diffusion layers are divided into plural in respective columns, and are connected electrically to each other through bit line contact diffusion layers. The width of sidewall insulating films on the sides of the bit line contact diffusion layers formed at the word lines arranged adjacent to the bit line contact diffusion layers is smaller than that of the sidewall insulating films formed on the opposite sides of the bit line contact diffusion layers.
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