| 摘要 |
In one embodiment of the present invention, in a method of fabricating a nitride semiconductor laser device, after an insulating film is formed on a layered nitride semiconductor portion on a substrate, a resist mask is formed on the insulating film, such that the insulating film is exposed near a position where an exit-side cleaved facet and a reflection-side cleaved facet are formed. The insulating film near a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed is then removed, and, after the resist mask is removed, cleavage is performed. As a result, even if the substrate and the layered nitride semiconductor portion are cleaved at a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed, the insulating film is not broken. This helps prevent fragments produced from the insulating film from being adhered to the exit-side cleaved facet and to the reflection-side cleaved facet.
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