| 发明名称 |
INTEGRATED CIRCUIT SYSTEM EMPLOYING A MODIFIED ISOLATION STRUCTURE |
| 摘要 |
An integrated circuit system that includes: providing a substrate; forming a trench within the substrate; forming a liner on a sidewall of the trench; and forming a dielectric material at a trench bottom with a dielectric width dimension that exceeds that of a width dimension of the trench.
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| 申请公布号 |
US2009325359(A1) |
申请公布日期 |
2009.12.31 |
| 申请号 |
US20080165624 |
申请日期 |
2008.06.30 |
| 申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LIU HUANG;WIDODO JOHNNY;SHU JEFF;GOH LOH NAH LUONA;CHENG JACK;LU WEI;TIAN JINGZE;RAO XUESONG |
| 分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
| 代理机构 |
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代理人 |
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