发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device that prevents a power noise generated at a data input/output pad in a read operation from affecting a data strobe signal pad. The semiconductor memory device includes first power supply voltage pads for a data output circuit, a first power mesh, and a second power supply voltage pad for a data strobe signal output circuit. The first power mesh connects first power supply voltage pads to one another. The second power supply voltage pad is electrically separated from the first power mesh.
申请公布号 US2009323451(A1) 申请公布日期 2009.12.31
申请号 US20080323221 申请日期 2008.11.25
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 LEE KANG-SEOL;YOON SEOK-CHEOL
分类号 G11C5/14;G11C7/00 主分类号 G11C5/14
代理机构 代理人
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