发明名称 CMOS image sensor and method for fabricating the same
摘要 A CMOS image sensor that includes a semiconductor substrate with a plurality of photodiodes arranged at fixed intervals on the semiconductor substrate. A light-shielding layer partially overlapping the plurality of photodiodes and an insulating interlayer are formed on an entire surface of the semiconductor substrate including the plurality of photodiodes. A color filter layer having a plurality of color filters separated by a predetermined gap is formed on the insulating interlayer and a planarization layer is formed over the entire surface of the semiconductor substrate including the color filter layer. A plurality of microlenses are formed on the planarization layer in correspondence with the color filters of the color filter layer, wherein an additional structural layer, disposed between the color filter layer and the insulating interlayer, is provided to close a predetermined gap between the color filters of the color filter layer.
申请公布号 US2009325338(A1) 申请公布日期 2009.12.31
申请号 US20090458833 申请日期 2009.07.23
申请人 JUNG MENG AN 发明人 JUNG MENG AN
分类号 H01L31/18 主分类号 H01L31/18
代理机构 代理人
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