TUNNEL MAGNETORESISTANCE DEVICE

摘要

PURPOSE: A tunnel magnetic resistance element is provided to increase the tunneling current and the surface area by using the surface irregularity of a pinned layer. CONSTITUTION: A substrate(10) is formed into the silicon substrate having an insulating layer(11). The lower electrode layer is formed on the upper part of the insulating layer in the thickness of 30nm with a sputtering method. A pinned layer(30) having the thickness of the total 10nm is comprised of a lower pinned layer(31) and an upper pinned layer(32). The lower pinned layer is formed into a PtMn thin film showing antiferromagnetism. The upper pinned layer is formed into an NiFe thin film showing ferromagnetism. A tunnel barrier layer(40) is an insulating thin film which is deposited on the upper part of the upper pinned layer with the CVD method. A free layer(50) is an NiFe thin film which is formed on the tunnel barrier layer in the thickness of 100nm with a sputtering method.