| 摘要 |
Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0<=x<=1, and ranges therebetween; 0<=y<=0.2, and ranges therebetween; 0.001<=z<=0.02, and ranges therebetween; and 0<=w<=2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.
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