| 摘要 |
A semiconductor device having a recess gate includes a semiconductor substrate having a recess, a conductive pattern for a gate electrode filled into the recess, and having an extension portion protruding higher than a surface of the semiconductor substrate, an epitaxial semiconductor layer having a top surface disposed over the semiconductor substrate, and a gate insulating layer disposed between the epitaxial semiconductor layer and the conductive pattern, and between the semiconductor substrate and the conductive pattern. Further, a method of fabricating the same is disclosed.
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