| 摘要 |
A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si-H bonds and a plurality of N-H bonds, and a ratio of Si-H bonds to N-H bonds being equal to or smaller than 0.5.
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