PURPOSE: A method for recovering high purified silicon is provided to minimize environment contamination reusing the silicon recovered from the waste slurry as a solar cell or wafer of a semiconductor. CONSTITUTION: The slurry includes the silicon and the silicon carbide. The slurry is heated at a temperature of 1450 to 2000 degrees centigrade. One of the silicon and the silicon carbide is melt. The silicon is recovered from the slurry using the difference between the melting points of the silicon and the silicon carbide. The silicon is recovered from the slurry by oxidizing the carbon component included in the silicon carbide. The silicon is recovered from the slurry by removing the boron component with the plasma process.
