SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A semiconductor device and a semiconductor substrate are provided to suppress BTBT(Band-To-Band Tunneling) by increasing the distance between first and second impurity-doped regions. CONSTITUTION: A gate pattern(330) is formed on a semiconductor substrate(310). A body region(370) is located on the gate pattern. First and second impurity-doped regions(340,350) are positioned on the body region. A cutoff insulation region(380) is positioned between the first and second impurity-doped regions. A BOX(Buried Oxide) insulation region(315) is positioned between the semiconductor substrate and the gate pattern. A gate insulation region(360) is positioned between the gate pattern and the body region.