发明名称 REDUCING LEAKAGE IN DIELECTRIC MATERIALS INCLUDING METAL REGIONS INCLUDING A METAL CAP LAYER IN SEMICONDUCTOR DEVICES
摘要 By introducing an additional heat treatment prior to and/or after contacting a sensitive dielectric material with wet chemical agents, such as an electrolyte solution, enhanced performance with respect to leakage currents or dielectric strength may be accomplished during the fabrication of advanced semiconductor devices. For example, metal cap layers for metal lines may be provided on the basis of electroless deposition techniques, wherein the additional heat treatment(s) may provide the required electrical performance.
申请公布号 US2009325375(A1) 申请公布日期 2009.12.31
申请号 US20090425498 申请日期 2009.04.17
申请人 PREUSSE AXEL;NOPPER MARKUS;ORTLEB THOMAS;BOEMMELS JUERGEN 发明人 PREUSSE AXEL;NOPPER MARKUS;ORTLEB THOMAS;BOEMMELS JUERGEN
分类号 H01L21/768 主分类号 H01L21/768
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