发明名称 |
Memory device, an information storage process, a process, and a structured material |
摘要 |
A memory device, including a plurality of nanoscale memory cells (1510, 1512) created by applying pressure to and removing pressure from one or more regions (1510, 1512) of a substance (1502) to change the electrical conductivity of those regions (1510, 1512). An electrically conductive read probe (1514) determines the conductivities of the regions and thereby the information stored in the cells. A write probe (1508) applies pressure to and removes pressure from selected cells to change the electrical conductivity of those cells and thereby store or erase information.
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申请公布号 |
US2009323407(A1) |
申请公布日期 |
2009.12.31 |
申请号 |
US20040582588 |
申请日期 |
2004.12.09 |
申请人 |
WILLIAMS JAMES STANISLAUS;BRADBY JODI ELISABETH;SWAIN MICHAEL VINCENT |
发明人 |
WILLIAMS JAMES STANISLAUS;BRADBY JODI ELISABETH;SWAIN MICHAEL VINCENT |
分类号 |
G11C11/00;G11B9/00;G11B9/04;G11B9/14;G11B11/08;G11C11/34;G11C16/02 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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