发明名称 |
Methods of forming improved electromigration resistant copper films and structures formed thereby |
摘要 |
Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a doping material on an overburden region of a conductive structure, diffusing a portion of the doping material into a portion of the conductive structure, and then removing the overburden region.
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申请公布号 |
US2009321935(A1) |
申请公布日期 |
2009.12.31 |
申请号 |
US20080215987 |
申请日期 |
2008.06.30 |
申请人 |
O'BRIEN KEVIN;GSTREIN FLORIAN;BALAKRISHNAN SRIDHAR |
发明人 |
O'BRIEN KEVIN;GSTREIN FLORIAN;BALAKRISHNAN SRIDHAR |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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