发明名称 |
HETERO-CRYSTALLINE STRUCTURE AND METHOD OF MAKING SAME |
摘要 |
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.
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申请公布号 |
US2009321715(A1) |
申请公布日期 |
2009.12.31 |
申请号 |
US20090555186 |
申请日期 |
2009.09.08 |
申请人 |
KOBAYASHI NOBUHIKO;WANG SHIH YUAN |
发明人 |
KOBAYASHI NOBUHIKO;WANG SHIH YUAN |
分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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