发明名称 |
SELF-ALIGNED INSULATING ETCHSTOP LAYER ON A METAL CONTACT |
摘要 |
A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.
|
申请公布号 |
US2009321856(A1) |
申请公布日期 |
2009.12.31 |
申请号 |
US20080146584 |
申请日期 |
2008.06.26 |
申请人 |
RACHMADY WILLY;BLACKWELL JAMES |
发明人 |
RACHMADY WILLY;BLACKWELL JAMES |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|