Radiation detector, has passive area formed along side surfaces for controlling addition of radiations irradiated laterally in direction of active area for producing signal of radiation detector in active area of semiconductor body

摘要

The detector (1) has a semiconductor body (2) with an active area (20) made of silicon for detecting radiations and side surfaces (23) for limiting the body in a lateral direction. A passive area (6) made of semiconductor material is formed along the side surfaces for controlling addition of the radiations irradiated laterally in the direction of the active area for producing a signal of the detector in the active area. The passive area runs between the active area and the side surfaces and is formed by a recess in the body, where the recess is filled with a filling material.