发明名称 |
Plasma Processing Apparatus and Plasma Processing Method |
摘要 |
There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers.
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申请公布号 |
US2009321017(A1) |
申请公布日期 |
2009.12.31 |
申请号 |
US20080206021 |
申请日期 |
2008.09.08 |
申请人 |
TSUBONE TSUNEHIKO;KITADA HIROHO;SAKAI YOSUKE;YOSHIOKA KEN;OMOTO YUTAKA;YAKUSHIJI MAMORU;KOUZUMA YUTAKA |
发明人 |
TSUBONE TSUNEHIKO;KITADA HIROHO;SAKAI YOSUKE;YOSHIOKA KEN;OMOTO YUTAKA;YAKUSHIJI MAMORU;KOUZUMA YUTAKA |
分类号 |
C23F1/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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