发明名称 Plasma Processing Apparatus and Plasma Processing Method
摘要 There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers.
申请公布号 US2009321017(A1) 申请公布日期 2009.12.31
申请号 US20080206021 申请日期 2008.09.08
申请人 TSUBONE TSUNEHIKO;KITADA HIROHO;SAKAI YOSUKE;YOSHIOKA KEN;OMOTO YUTAKA;YAKUSHIJI MAMORU;KOUZUMA YUTAKA 发明人 TSUBONE TSUNEHIKO;KITADA HIROHO;SAKAI YOSUKE;YOSHIOKA KEN;OMOTO YUTAKA;YAKUSHIJI MAMORU;KOUZUMA YUTAKA
分类号 C23F1/00 主分类号 C23F1/00
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