发明名称 |
Method of Forming Fully Silicided NMOS and PMOS Semiconductor Devices Having Independent Polysilicon Gate Thicknesses, and Related Device |
摘要 |
A method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device. At least some of the illustrative embodiments are methods comprising forming an N-type gate over a semiconductor substrate (the N-type gate having a first thickness), forming a P-type gate over the semiconductor substrate (the P-type gate having a second thickness different than the first thickness), and performing a simultaneous silicidation of the N-type gate and the P-type gate.
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申请公布号 |
US2009321846(A1) |
申请公布日期 |
2009.12.31 |
申请号 |
US20090555027 |
申请日期 |
2009.09.08 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MEHRAD FREIDOON;YU SHAOFENG;VITALE STEVEN A.;HUFFMAN CRAIG H. |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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