| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent contamination of a silicon wafer among the manufacturing process by covering the rear side of the silicon wafer with an oxide film. CONSTITUTION: A first oxide film(22A) is formed in the other side of a silicon substrate(21). The first film is formed to cover one side of the silicon substrate at least. A mask pattern is formed by patterning the first film. A device isolation region is formed in one side of the silicon substrate. A gate insulation film(28G) is formed on one side of the silicon substrate. A gate electrode(29G) is formed in one side of the silicon substrate while interposing the gate insulation film. The source region and the drain region of the transistor are formed in both sides of the gate electrode. A wiring layer is formed on the silicon substrate.</p> |
| 申请公布号 |
KR20090133078(A) |
申请公布日期 |
2009.12.31 |
| 申请号 |
KR20090052892 |
申请日期 |
2009.06.15 |
| 申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
WADA TAKAYUKI;TERAHARA MASANORI;OH JUNJI |
| 分类号 |
H01L21/336;H01L21/31;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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