摘要 |
A transistor comprises a source region of a first conductivity type and electrically communicating with a first semiconductor region. The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconductor region that differs from the first semiconductor region. An interface exists between the first semiconductor region and the second semiconductor region. The transistor also comprises a voltage tap region comprising at least a portion located in a position that is closer to the interface than the drain region. A mixed technology circuit is also described.
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