发明名称 |
Intersubstrate-dielectric nanolaminate layer for improved temperature stability of gate dielectric films |
摘要 |
Embodiments of an apparatus with a crystallization-resistant high-kappa dielectric and nanolaminate layer stack in a device and methods for forming crystallization-resistant high-kappa dielectric and nanolaminate layer stack are generally described herein. Other embodiments may be described and claimed.
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申请公布号 |
US2009321707(A1) |
申请公布日期 |
2009.12.31 |
申请号 |
US20080215321 |
申请日期 |
2008.06.25 |
申请人 |
METZ MATTHEW;DEWEY GILBERT |
发明人 |
METZ MATTHEW;DEWEY GILBERT |
分类号 |
H01L47/00;H01L21/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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