GATE STRUCTURE, METHOD OF FORMING THE SAME AND SEMICONDUCTOR DEVICE HAVING THE SAME

摘要

PURPOSE: A gate structure, a forming method thereof, and a semiconductor device including the same are provided to prevent the increase of the sheet resistance of a metal film by forming a nitrification prevention film between a metal film and a nitrification film mask. CONSTITUTION: A gate insulation film(105) is formed on a substrate(100). A polysilicon film(110) is formed on the gate insulation film. A metal film(120) is formed on the polysilicon film. The metal silicide nitrification film is formed on the metal film. The metal silicide nitrification film includes one of tungsten, tantalum, titanium, cobalt, molybdenum, hafnium, ad nickel. The thickness of the metal silicide nitrification film is 5 to 100 angstrom.