发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A substrate composed of hexagonally crystalline SiC is prepared such that its main surface is in the direction at which the minimum angle between the main surface and a plane perpendicular to the (0001) plane is one degree or less, for example, in the direction at which the minimum angle between the main surface and the [0001] direction, which is perpendicular to the (0001) plane, is one degree or less. A horizontal semiconductor device is formed on one main surface of the substrate prepared by the foregoing method. Thus, it was possible to improve the value of breakdown voltage significantly over the horizontal semiconductor device in which the main surface of the substrate composed of hexagonally crystalline SiC is in the direction along the (0001) direction.
|
申请公布号 |
EP2139031(A1) |
申请公布日期 |
2009.12.30 |
申请号 |
EP20080872677 |
申请日期 |
2008.10.03 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJIKAWA, KAZUHIRO;HARADA, SHIN |
分类号 |
H01L21/338;H01L21/28;H01L21/337;H01L29/04;H01L29/201;H01L29/778;H01L29/78;H01L29/808;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|