CLUSTER ION IMPLANTATION FOR DEFECT ENGINEERING

摘要

A method of semiconductor manufacturing is disclosed in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and without a co-implant of non-dopant cluster ion, such as a carbon cluster ion, wherein the dopant ion is implanted into the amorphous layer created by the co-implant in order to reduce defects in the crystalline structure, thus reducing the leakage current and improving performance of the semiconductor junctions Dopant ion compounds of the form AnHx+ and AnRzHx+ are used in order to minimize crystal defects as a result of ion implantation