发明名称 HIGH ELONGATION SILICON MEMBRANE OF SEMICONDUCTOR CMP PROCESS
摘要 PURPOSE: A high-elongation silicon membrane for a semiconductor chemical mechanical polishing process is provided, which improves slip property and stickiness of the membrane by maximizing surface reforming effect of the membrane. CONSTITUTION: A high-elongation silicon membrane for a semiconductor chemical mechanical polishing process is manufactured by adding hardener 0.01~2.00wt.% to silicon 37~46 wt.% of 55 hardness, silicon 8~9wt.% of 50 hardness, and silicon 45~54.99wt.% of 20 hardness, and compulsorily mixing them in the milling machine at 10~50deg.C for 30~50 minutes. The membrane is manufactured by molding high-elongation silicon in the mold at 150~170deg.C for 20~30 minutes. While the membrane is tenuously dipped in a dipping bath, the surface of membrane is coated with coating solution(24).
申请公布号 KR20090131792(A) 申请公布日期 2009.12.30
申请号 KR20080057718 申请日期 2008.06.19
申请人 M&EE TECHNOLOGY CO., LTD. 发明人 YOO, DAE CHEON
分类号 B24D3/00;H01L21/304 主分类号 B24D3/00
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