Method for fabricating a dual workfunction semiconductor device made thereof

摘要

A method for manufacturing a dual workfunction semiconductor device, comprising: manufacturing a first transistor comprising a gate stack having a first workfunction, the gate stack comprising a dielectric capping layer and a metal electrode layer, the dielectric capping layer determining the first workfunction, manufacturing a second transistor comprising a gate stack having a second workfunction and comprising a dielectric capping layer and a metal electrode layer, the dielectric capping layers comprising the same dielectric material, and the second work function being the same as the first workfunction, applying a first thermal budget to the first gate dielectric capping layer and a second thermal budget to the second gate dielectric capping layer, the first thermal budget being smaller than the second thermal budget such that the first workfunction is modified into a final first workfunction and such that the second workfunction is modified into a final second workfunction.