SIMULTANEOUS WRITE AND VERIFY IN A NON-VOLATILE STORAGE
摘要
A memory system includes a substrate, control circuitry on the substrate, a three dimensional memory array (above the substrate) that includes a plurality of memory cells with reversible resistance-switching elements, and a circuit for detecting the setting and resetting of the reversible resistance-switching elements.
申请公布号
WO2009158673(A1)
申请公布日期
2009.12.30
申请号
WO2009US48951
申请日期
2009.06.26
申请人
SANDISK 3D LLC;FASOLI, LUCA, G.;YAN, TIANHONG;LEE, JEFFREY KOON, YEE