发明名称 CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION
摘要 Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
申请公布号 WO2009108322(A3) 申请公布日期 2009.12.30
申请号 WO2009US01202 申请日期 2009.02.26
申请人 MOLECULAR IMPRINTS, INC. 发明人 BROOKS, CYNTHIA, B.;LABRAKE, DWAYNE, L.;KHUSNATDINOV, NIYAZ;MILLER, MICHAEL, N.;SREENIVASAN, SIDLGATA, V.;LENTZ, DAVID, JAMES;XU, FRANK, Y.
分类号 B41F33/00 主分类号 B41F33/00
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