MAGNETIC MEMORY ELEMENT AND ITS DRIVING METHOD AND NONVOLATILE MEMORY DEVICE

摘要

A magnetic memory element for storing information in a spin valve structure having a free layer (5), a pin layer (3) and a nonmagnetic layer (4) sandwiched between them wherein the free layer (5) is provided with other nonmagnetic layer (6) and a magnetic variation layer (7) having magnetic characteristics which varies depending on the temperature, and the spin valve structure is provided with a plurality of notches (NN, NE, NS, NW) including one notch of different shape in the circumferential edge portion.