| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor is provided to prevent degradation of an operation property of a semiconductor device due to noncontact between a via and a metal line by forming the via and the metal line at the same time. CONSTITUTION: An interlayer insulation film(402) is formed on a sub metal line(400). A via(404) is formed in order to be connected to the sub metal line inside the interlayer insulation film. A first metal material film(406) and a second metal material film(410) are successively deposited on a via. A Ti/TiN film(408) is interposed between the first metal material film and the second metal material film. A via pattern is formed by etching the second metal material film. An interlayer insulation film(416) is deposited on the second metal material film. The first metal material film and the second metal material film are made of aluminum.
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