摘要 |
Disclosed is an improved semiconductor structure 150 (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor 100) having a narrow essentially interstitial-free SIC pedestal 120 with minimal overlap of the extrinsic base 104. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base 103 and collector space-charge regions than can be achieved with conventional technology. |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;KRISHNASAMY, RAJENDRAN;GLUSCHENKOV, OLEG;SCHONENBERG, KATHRYN, T. |
发明人 |
KRISHNASAMY, RAJENDRAN;GLUSCHENKOV, OLEG;SCHONENBERG, KATHRYN, T. |