| 摘要 |
<p>The method involves depositing sacrificial material e.g. molybdenum, before depositing another sacrificial material e.g. silicon dioxide, and forming a pattern (6a) in the former material after formation of a pattern (2a), so that the pattern (2a) is arranged on the pattern (6a), where the pattern (2a) freely leaves area of predefined width to periphery of upper face of the pattern (6a). A set of walls of the patterns and the predefined area of the pattern (6a) are covered by an active layer (3). The former material is eliminated after elimination of the latter material.</p> |
