SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a semiconductor device comprising a gate insulating film (3) formed on a semiconductor substrate (1), a second gate electrode part (20b) of a gate electrode (20), which is composed of a TiN film (4) and a polysilicon film (5), and an interlayer insulating film (8) so formed on the semiconductor substrate (1) as to cover the gate electrode (20). The second gate electrode part (20b) of the gate electrode (20) and the interlayer insulating film (8) are sequentially formed on the gate insulating film (3). A contact (9) so formed as to penetrate the interlayer insulating film (8) and the polysilicon film (5) is directly connected with the TiN film (4).