ELECTROSTATIC OSCILLATOR AND ELECTRONIC DEVICE

摘要

A silicon oxide film (113) is formed on the oscillation parts (102, 103) of an MEMS type electrostatic drive bending oscillator, and at least one structure whereon no oxide is formed is provided near the oscillation parts (102, 103). When a structure wherein the two end parts of the structural body and the two end parts of the oscillation parts (102, 103) are integrated is adopted, a compression stress is applied to the oscillation parts (102, 103) so that the frequency temperature characteristic can be improved.