| 摘要 |
This invention claims a high voltage device with constant current source and the manufacturing method thereof, which can be directly applied to AC/DC supply and is with function of overcurrent and overvoltage protection. The said device is composed of a P type silicon substrate (1), an oxide layer (6), a drain metal (2), a source metal (3), a gate metal (4), a P+substrate contact region (51), a N+drain region (52), an N+source region (53), an N-channel region (54) connecting the said N+drain region (52) and N+source region (53), and an N-drain region (92) enveloping the said N+drain region (52); the said drain metal (2) fills drain through hole (82) and connects the said N+drain region (52); the said source metal (3) fills source through hole (83), and connects the said N+source region (53) and P+substrate contact region (51); the said source metal (3) and gate metal (4) are electrically connected by connecting metal (34). The manufacturing method comprises steps of forming N+drain region, N+source region, N-drain region, P+substrate contact region, N-drain region and metal layer. |
