摘要 |
Embodiments of the invention include method for in-situ chamber dry clean after photomask plasma etching. In one embodiment, the method includes placing a photomask upon a support pedestal, introducing a process gas into a process chamber, forming a plasma from the process gas, etching a chromium containing layer disposed on the photomask in the presence of the plasma, removing the photomask from the support pedestal, placing a dummy substrate on the pedestal and performing an in-situ dry cleaning process by flowing a cleaning gas containing O2 through the process chamber while the dummy substrate is disposed on the support pedestal. |
申请人 |
APPLIED MATERIALS. INC.;CHEN, XIAOYI;MAO, ZHIGANG;KNICK, DAVID;GRIMBERGEN, MICHAEL;BIVENS, DARIN;CHANDRAHOOD, MADHAVI;IBRAHIM, IBRAHIM;KUMAR, AJAY |
发明人 |
CHEN, XIAOYI;MAO, ZHIGANG;KNICK, DAVID;GRIMBERGEN, MICHAEL;BIVENS, DARIN;CHANDRAHOOD, MADHAVI;IBRAHIM, IBRAHIM;KUMAR, AJAY |