Method of manufacturing a device using a substrate having a monocrystalline silicon sacrificial layer.

摘要

The substrate has a sacrificial layer constituted by a stack of monocrystalline silicon layers (3) located between monocrystalline silicon-germanium layers. The stack is located between two monocrystalline parts. One of the monocrystalline parts is compatible with an epitaxy of a silicon-germanium material. Another monocrystalline part is selected among silicon, strontium titanate/lead zirconate titanate, or strontium/strontium ruthenate/lead zirconate titanate. Independent claims are also included for the following: (1) a method for realizing a heterogeneous substrate (2) a method for realizing a component from the heterogeneous substrate.